Characterization of Czochralski Silicon Wafers Grown at a Low Growth Rate by Photoluminescence Spectroscopy

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Abstract
Microdefects in silicon wafers were characterized based on photoluminescence measurements obtained with a high sensitivity Fourier-transform (FT)-Raman spectrometer. Some luminescence peaks were obtained from a crystal which was pulled at a low growth rate while they were not observed from a crystal which was pulled at a normal rate. The luminescence peaks were observed in the region of the wafers where ring-oxidation-induced-stacking-faults (ring-OSF) were formed and inside the ring. By comparing the behavior of annealing-induced defects, that is D-line and P-line defects, and the grown-in defects observed in low-growth-rate crystals, it was concluded that the grown-in defects were P-line defects. Based on the PL intensity of the peak at 0.75 eV which was observed from a crystal pulled at a low growth rate, it was found that the effect of the thermal history of a crystal pulled at 0.8 mm/min was equivalent to an annealing at 500°C for 3 h.