High voltage power MOSFETs with a trench-gate structure
- 1 March 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (3) , 381-386
- https://doi.org/10.1016/0038-1101(90)90204-r
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Self-aligned UMOSFET's with a specific on-resistance of 1 mΩ.cm2IEEE Transactions on Electron Devices, 1987
- Junction termination extension for near-ideal breakdown voltage in p-n junctionsIEEE Transactions on Electron Devices, 1986
- Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devicesSolid-State Electronics, 1982
- A 600-volt MOSFET designed for low on-resistanceIEEE Transactions on Electron Devices, 1980