Cathodoluminescence investigation of lateral carrier confinement in GaAs/AlGaAs quantum wires grown by OMCVD on nonplanar substrates
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1-3) , 257-262
- https://doi.org/10.1016/0039-6028(92)91132-u
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Theory of optical anisotropy in quantum-well-wire arrays with two-dimensional quantum confinementPhysical Review B, 1991
- Time-resolved investigations of sidewall recombination in dry-etched GaAs wiresApplied Physics Letters, 1990
- Optical properties of III–V semiconductor quantum wires and dotsJournal of Luminescence, 1990
- Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAsApplied Physics Letters, 1989
- Linear and nonlinear optical properties of semiconductor quantum wellsAdvances in Physics, 1989
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- Electroabsorption of highly confined systems: Theory of the quantum-confined Franz–Keldysh effect in semiconductor quantum wires and dotsApplied Physics Letters, 1988
- Recombination dynamics of carriers in GaAs-GaAlAs quantum well structuresSurface Science, 1986
- Localization induced electron-hole transition rate enhancement in GaAs quantum wellsApplied Physics Letters, 1984
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982