Growth mode evolution during homoepitaxy of GaAs (001)
- 24 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (4) , 484-486
- https://doi.org/10.1063/1.111137
Abstract
Scanning tunneling microscopy studies have been performed on GaAs homoepitaxial films grown by molecular-beam epitaxy. After an initial transient regime, indicated by reflection high-energy electron diffraction oscillations, the system evolves to a dynamical steady state. This state is characterized by a constant step density and as such the growth mode can be termed generalized step flow.Keywords
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