Mobility and threshold-voltage comparison between [110]- and (100)-oriented ultrathin-body silicon MOSFETs
- 25 September 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (10) , 2582-2588
- https://doi.org/10.1109/ted.2006.882397
Abstract
Mobility and threshold-voltage (Vth) behaviour in (110) and (100) ultrathin body (UTB) n- and p-MOSFETs are experimentally examined, and performance is compared between (110) and (100) UTB CMOSFETs based on the estimated propagation delay time. Out-of-plane effective mass (mz) is the key parameter that causes the difference in mobility and Vth behavior between (110) and (100). Large Vth increase and monotonic mobility degradation, as a decrease of the silicon-on-insulator (SOI) thickness, are observed in (110) UTB nMOSFETs due to a smaller mz than (100). Mobility enhancement in (100) UTB double-gate (DG) pMOSFETs is demonstrated, which may be attributable to volume inversion. Propagation delay time is estimated based on the measured mobility, and delay is improved by 30% in (110) UTB DG CMOSFETs compared to conventional bulk CMOSFETsKeywords
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