Fabrication and Electrical Properties of MBE Grown Metal-Gallium and Metal-Arsenic Compounds on Ga1-xAlxAs
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Growth of αRh2As on GaAs (001) in a molecular-beam epitaxy systemJournal of Applied Physics, 1988
- Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxyApplied Physics Letters, 1988
- Epitaxial growth of GaAs/NiAl/GaAs heterostructuresApplied Physics Letters, 1988
- Growth of RhGa on GaAs (001) in a molecular beam epitaxy systemApplied Physics Letters, 1988
- Epitaxial, thermodynamically stabilised metal/III-V compound semiconductor interface: NiGa on GaAs (001)Electronics Letters, 1987
- The growth of AuGa2 thin films on GaAs(001) to form chemically unreactive interfacesJournal of Materials Research, 1986
- Calculation of Schottky barrier heights from semiconductor band structuresSurface Science, 1986
- Role of surface antisite defects in the formation of Schottky barriersPhysical Review B, 1982
- Schottky barriers: An effective work function modelApplied Physics Letters, 1981
- The work function of the elements and its periodicityJournal of Applied Physics, 1977