Growth of RhGa on GaAs (001) in a molecular beam epitaxy system
- 21 March 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (12) , 948-950
- https://doi.org/10.1063/1.99237
Abstract
Thin films of RhGa were grown on GaAs(001) in a molecular beam epitaxy system, by codeposition of rhodium and gallium from separated sources. The RhGa/GaAs contact is stable at least up to 550 °C and the film resistivity is low enough ( ρ≂36 μΩ cm) to allow applications in microelectronics. In spite of high linear misfits, the as-deposited RhGa films exhibit the two following epitaxial arrangements related by a 90° rotation: [100](011)RhGa//[110](001)GaAs and [100](011)RhGa//[11̄0](001)GaAs. After annealing at 550 °C, only one arrangement is observed.Keywords
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