Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
- 1 January 1993
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- High-frequency FET noise performance: a new approachIEEE Transactions on Electron Devices, 1989
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975
- Noise in junction- and MOS-FET's at high temperaturesSolid-State Electronics, 1969