Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors
- 24 January 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (4) , 534-537
- https://doi.org/10.1103/physrevlett.72.534
Abstract
The problem of doping in II-VI semiconductors is examined using an ab initio pseudopotential approach with emphasis on ZnSe, ZnTe, MgSe, and zinc blende MgTe. The n-type doping of ZnTe and MgTe is found to be hindered by the formation of localized DX-like deep donor centers. DX centers are found to be energetically unfavorable in ZnSe and MgSe. The possibility of obtaining large band gap MgZnSeTe semiconductor alloys that can be doped low-resistance n- and p-type is discussed.Keywords
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