Deep impurity levels in semiconductor superlattices
- 15 November 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (15) , 10677-10692
- https://doi.org/10.1103/physrevb.38.10677
Abstract
A theory of -bonded substitutional deep impurity levels in periodic × GaAs/ As superlattices predicts that as the thickness t(GaAs) of each GaAs layer is reduced below a critical value (≲17 Å or ≲6 for x=0.7) common shallow donor impurities such as Si cease donating electrons to the conduction band and instead become deep traps.
Keywords
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