Direct optical measurement of surface dielectric responses: Interrupted growth on (001) GaAs
- 8 January 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (2) , 192-195
- https://doi.org/10.1103/physrevlett.64.192
Abstract
Anisotropies of the visible-near-ultraviolet dielectric responses of various (001) GaAs molecular-beam-epitaxy growth surfaces are measured at temperature using a new optical double-modulation technique and a low-strain fused-quartz window. Tight-binding calculations identify structure at 1.8 eV with Ga dimers and at 2.6 and 4.1 eV with As dimers. Transient behavior on interruption of As flux is substantially altered by misorientation, suggesting substantially different terrace properties for vicinally cut surfaces.Keywords
This publication has 18 references indexed in Scilit:
- Temporal and spectral dependences of the anisotropic dielectric responses of singular and vicinal (001) GaAs surfaces during interrupted molecular-beam epitaxy growthJournal of Vacuum Science & Technology B, 1989
- Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum ConfinementPhysical Review Letters, 1989
- Determination of the complex dielectric function of Si(111) 2 × 1, GaAs(110) and GaP(110) surfaces by polarized surface differential reflectivityPhysica Scripta, 1988
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor depositionJournal of Vacuum Science & Technology B, 1988
- Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAsJournal of Vacuum Science & Technology A, 1988
- Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)Physical Review Letters, 1987
- (AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Anisotropies in the Above—Band-Gap Optical Spectra of Cubic SemiconductorsPhysical Review Letters, 1985
- Optical Detection of Surface States on Cleaved (111) Surfaces of GePhysical Review Letters, 1968