Effect of in situ etching and substrate misorientation on the morphology of VPE InP layers
- 1 August 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 54 (2) , 369-371
- https://doi.org/10.1016/0022-0248(81)90485-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Vapour phase epitaxy of InP: Growth kinetics and controlled dopingJournal of Crystal Growth, 1979
- Vapor‐Phase Etching and Polishing of GaAs Using Arsenic TrichlorideJournal of the Electrochemical Society, 1977
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeurJournal of Crystal Growth, 1972