A robust physical and predictive model for deep-submicrometer MOS circuit simulation
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 14.2.1-14.2.4
- https://doi.org/10.1109/cicc.1993.590711
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Threshold voltage model for deep-submicrometer MOSFETsIEEE Transactions on Electron Devices, 1993
- A physical model for MOSFET output resistancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- The effect of high fields on MOS device and circuit performanceIEEE Transactions on Electron Devices, 1984
- VLSI limitations from drain-induced barrier loweringIEEE Transactions on Electron Devices, 1979