Ion-implantation in bulk semi-insulating 4H–SiC
- 15 July 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (2) , 752-758
- https://doi.org/10.1063/1.370799
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H–SiCApplied Physics Letters, 1998
- SiC Seeded Boule GrowthMaterials Science Forum, 1998
- High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor TransportMaterials Science Forum, 1998
- Silicon Carbide High Frequency DevicesMaterials Science Forum, 1998
- Recent Advances in SiC Power DevicesMaterials Science Forum, 1998
- Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiCMaterials Science Forum, 1998
- Nitrogen Ion Implantation into α-SiC Epitaxial LayersPhysica Status Solidi (a), 1997
- Doping of SiC by Implantation of Boron and AluminumPhysica Status Solidi (a), 1997
- 4H-SiC MESFET's with 42 GHz f/sub max/IEEE Electron Device Letters, 1996
- SiC Power DevicesMRS Proceedings, 1996