Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−xSbx grown on (100) GaAs by molecular-beam epitaxy
- 15 July 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (2) , 952-955
- https://doi.org/10.1063/1.341904
Abstract
InAs1−xSbx films have been successfully grown by molecular‐beam epitaxy on (100) GaAs substrates. Long wavelength photoluminescence spectra have been obtained reproducibly in the 3–5 and 8–12 μm spectral ranges in III‐V compound semiconductors.This publication has 5 references indexed in Scilit:
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