Leakage current mechanism in sub-micron polysilicon thin-film transistors
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (8) , 1218-1223
- https://doi.org/10.1109/16.506772
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Degradation of polysilicon TFTs during dynamic stressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistorsIEEE Transactions on Electron Devices, 1996
- Low Thermal Budget Poly-Si Thin Film Transistors on GlassJapanese Journal of Applied Physics, 1991
- Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFTIEEE Electron Device Letters, 1989
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985