Determination of the surface states trap density in power VDMOSFETs using charge pumping technique

This publication has 9 references indexed in Scilit:

• Theory and application of charge pumping for the characterization of Si-SiO/sub 2/ interface and near-interface oxide traps
  IEEE Transactions on Electron Devices, 1994
• Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes
  IEEE Transactions on Electron Devices, 1993
• Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
  IEEE Transactions on Electron Devices, 1989
• Evaluation of hot carrier degradation of N-channel MOSFET's with the charge pumping technique
  IEEE Electron Device Letters, 1986
• A model for the charge-pumping current based on small rectangular voltage pulses
  Solid-State Electronics, 1986
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984
• Determination of the spatial variation of interface trapped charge using short-channel MOSFET's
  IEEE Transactions on Electron Devices, 1983
• The use of charge pumping currents to measure surface state densities in MOS transistors
  Solid-State Electronics, 1976
• Charge pumping in MOS devices
  IEEE Transactions on Electron Devices, 1969