Spreading resistance in proton-implanted vertical-cavity surface-emitting diode lasers
- 28 December 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (26) , 3101-3103
- https://doi.org/10.1063/1.107974
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxyApplied Physics Letters, 1991
- Low series resistance high-efficiency GaAs/AlGaAs vertical-cavity surface-emitting lasers with continuously graded mirrors grown by MOCVDIEEE Photonics Technology Letters, 1991
- Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasersIEEE Journal of Quantum Electronics, 1991
- InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowthApplied Physics Letters, 1991
- High temperature performance of three-quantum-well vertical-cavity top-emitting lasersElectronics Letters, 1991
- High-power cw vertical-cavity top surface-emitting GaAs quantum well lasersApplied Physics Letters, 1990
- Continuous wave top surface emitting quantum well lasers using hybrid metal/semiconductor reflectorsElectronics Letters, 1990
- Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasersApplied Physics Letters, 1990
- Vertical-cavity surface-emitting InGaAs/GaAs lasers with planar lateral definitionApplied Physics Letters, 1990
- Low threshold planarized vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1990