High-Performance InAs Quantum Well based Corbino Magnetoresistive Sensors on Germanium Substrates
- 1 March 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (3R)
- https://doi.org/10.1143/jjap.38.1310
Abstract
High-quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy (MBE). Electron mobilities of 27,000 cm2/Vs for sheet concentrations of n S=1.8×1012 cm-2 were routinely achieved at room temperature for undoped InAs/Al0.2Ga0.8Sb quantum well structures on Germanium substrates. We developed a simple processing technology for the fabrication of Corbino magnetoresistive devices. Excellent current sensitivities of 195 Ω/T and voltage sensitivities of 2.35 T-1 at a magnetic field of 0.15 T were measured for Corbino shaped magnetoresistors on Germanium substrate at room temperature. This sensing performance is comparable to that obtained by identical sensors on GaAs substrate.Keywords
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