Crystallization Of Amorphous Tungsten Disilicide. Stacking Faults And Resistivity
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Crystallization kinetics of TaSi2 thin filmsMaterials Letters, 1985
- Fully relativistic self-consistent energy bands of WPhysical Review B, 1985
- Disordered electronic systemsReviews of Modern Physics, 1985
- Self-consistent semirelativistic energy bands ofPhysical Review B, 1985
- Electronic transport properties of tungsten silicide thin filmsJournal of Electronic Materials, 1984
- Temperature dependence of structural and electrical properties of Ta-Si thin alloy filmsJournal of Applied Physics, 1983
- Crystallization and resistivity of amorphous titanium silicide films deposited by coevaporationJournal of Applied Physics, 1982
- Tantalum silicide films deposited by dc sputteringJournal of Electronic Materials, 1981
- Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effectsJournal of Applied Physics, 1980
- Refractory metal silicide formation induced by As+ implantationApplied Physics Letters, 1980