Temperature and electric field dependence of hopping transport in ion-implanted Si:As
- 31 October 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 72 (2) , 173-176
- https://doi.org/10.1016/0038-1098(89)90517-6
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
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