Structural models for semiconductor As0.20Se0.50Te0.30 glass alloy by X-ray diffraction
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 86 (1-2) , 251-260
- https://doi.org/10.1016/0022-3093(86)90493-x
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Electrical conductivity and phenomenology of switching in the glassy alloy Ge0.09As0.20Te0.71Journal of Non-Crystalline Solids, 1985
- Structural study of amorphous Al0.20As0.50Te0.30, Al0.10As0.40Te0.50 and Al0.10As0.20Te0.70 by X-ray diffraction (II)Journal of Non-Crystalline Solids, 1985
- The structure of phosphorus-selenium glasses I. Concentration dependence of the short- and intermediate-range orderJournal of Non-Crystalline Solids, 1984
- Structure of amorphous and glassy Sb2S3 and its connection with the structure of As2X3 arsenic chalcogenide glassesJournal of Non-Crystalline Solids, 1982
- The neutron diffraction study of liquid GeTe and As2Te3Journal of Non-Crystalline Solids, 1979
- Radial distribution analysis of amorphous Al0.23Te0.77 by X-ray diffractionJournal of Non-Crystalline Solids, 1978
- Electron diffraction RDF analysis of amorphous As2Se3,AAs2Se2Te, As2SeTe2 and As2Te3 filmsJournal of Non-Crystalline Solids, 1974
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Neubestimmung der Nahordnung im glasigen Selen, im explosiven Antimon und im β‐ und γ‐ArsenZeitschrift für anorganische und allgemeine Chemie, 1964
- Vitreous Semiconductors (I)Physica Status Solidi (b), 1964