Carrier concentration and compensation ratio dependence of electron drift mobility in InAs1−xSbx
- 15 August 1992
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (4) , 1410-1415
- https://doi.org/10.1063/1.351700
Abstract
The electron mobility in InAs1−xSbx is calculated for an ionized impurity density between 5× 1014 cm−3 and 1 × 1017 cm−3 at 77 K. The various methods of calculating electron mobility are discussed and their respective merits and limitations summarized. In general, alloy scattering is the mobility limiting process at low carrier density (n ≤ 1015 cm−3) while ionized impurity scattering is important at higher carrier density. The effect of compensation (NA/ND) on low field drift mobility is also calculated for a range of carrier concentrations at x=0.1, 0.6, 0.9, and 1.0 compositions of particular technological significance. Compensation is found to degrade electron mobility quite significantly in all cases. The calculations at x=1.0 (InSb) are also found to be in good agreement with available experimental data.This publication has 37 references indexed in Scilit:
- The effect of InP buffer layer on the electron transport properties of epitaxial In1−xGaxAsJournal of Applied Physics, 1991
- Growth and properties of InAsxSb1−x, AlyGa1−ySb, and InAsxSb1−x/AlyGa1−ySb heterostructuresJournal of Crystal Growth, 1991
- Growth of InSb on GaAs by metalorganic chemical vapor depositionJournal of Crystal Growth, 1991
- High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detectorIEEE Electron Device Letters, 1990
- Monte Carlo simulation of hot electrons in InAlAs/InGaAs heterojunctionsSolid-State Electronics, 1989
- Dynamical theory of transport phenomena in solids based on their electronic dielectric propertiesPhysical Review B, 1989
- Electron transport in GaAs/AlxGa1−xAs heterojunctions at low temperaturesSolid-State Electronics, 1988
- Mobility of the two-dimensional electron gas at selectively doped n -type As/GaAs heterojunctions with controlled electron concentrationsPhysical Review B, 1986
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961