Growth and properties of InAsxSb1−x, AlyGa1−ySb, and InAsxSb1−x/AlyGa1−ySb heterostructures
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 633-637
- https://doi.org/10.1016/0022-0248(91)91054-e
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Far-infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wellsApplied Physics Letters, 1990
- Electrical characteristics of Au/p-AlSb metal-insulator-semiconductor Schottky diodesJournal of Applied Physics, 1989
- Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxyApplied Physics Letters, 1988
- Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxyApplied Physics Letters, 1988
- Demonstration of an InAsSb strained-layer superlattice photodiodeApplied Physics Letters, 1988
- Long-wavelength photoluminescence of InAs1−xSbx (0<x<1) grown by molecular beam epitaxy on (100) InAsApplied Physics Letters, 1988
- IIA-7 an AlSb/InAs/AlSb quantum well HFTIEEE Transactions on Electron Devices, 1987
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984
- Liquid phase epitaxial growth and characterization of InAsxSb1−;x AND In1−yGaySb ON (111)B InSb substratesJournal of Electronic Materials, 1981
- Fermi Level Position at Semiconductor SurfacesPhysical Review Letters, 1963