Electrical characteristics of Au/p-AlSb metal-insulator-semiconductor Schottky diodes
- 15 June 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (12) , 4924-4927
- https://doi.org/10.1063/1.343208
Abstract
Metal‐insulator‐semiconductor Schottky barrier diodes have been prepared on p‐type bulk AlSb by evaporating gold on a chemically etched (100) AlSb surface. The existence of an oxide‐rich interfacial layer between gold and AlSb of ∼70 Å thickness was shown by means of secondary ion mass spectrometry analysis. The current‐voltage (I‐V) and capacitance‐voltage (C‐V) characteristics were measured. The barrier height qφBp(0) obtained from the Richardson plot log(Is/T2) vs (1/nT) is 0.71 eV. The 1/C2‐vs‐V plot was not a straight line. From the ideality factor at room temperature (n=1.4) and the intercept voltage V0 of the 1/C2‐vs‐V curve (V0=1.2 V), a density Ds of interface states was evaluated around 5×1011 cm−2 eV−1.This publication has 9 references indexed in Scilit:
- Electrical properties of InP MIS devicesJournal of Physics D: Applied Physics, 1983
- Modulation-spectroscopy study of theband structurePhysical Review B, 1983
- A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodesJournal of Applied Physics, 1983
- Measurement of Richardson constant of GaAs Schottky barriersSolid-State Electronics, 1981
- Electrical characteristics of GaAs MIS Schottky diodesSolid-State Electronics, 1979
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Fermi Level Position at Semiconductor SurfacesPhysical Review Letters, 1963
- Preparation and Properties of Aluminum AntimonideJournal of the Electrochemical Society, 1958