Monte Carlo simulation of hot electrons in InAlAs/InGaAs heterojunctions
- 31 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1845-1849
- https://doi.org/10.1016/0038-1101(89)90323-7
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- High-field transport in InGaAs/InAlAs modulation-doped heterostructuresIEEE Transactions on Electron Devices, 1987
- Extremely High 2DEG Concentration in Selectively Doped In0.53Ga0.47As/N-In0.52Al0.48As Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1987
- Two-dimensional magnetophonon resonance. II. GaInAs-AlInAs heterojunctionsJournal of Physics C: Solid State Physics, 1983
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature MobilityJournal of the Physics Society Japan, 1982
- Current transport in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions at moderate electric fieldsJournal of Applied Physics, 1982
- Measurement of the Γ-L separation in Ga0.47In0.53As by ultraviolet photoemissionApplied Physics Letters, 1982
- Alloy scattering and high field transport in ternary and quaternary III–V semiconductorsSolid-State Electronics, 1978
- Alloy scattering in ternary III-V compoundsPhysical Review B, 1976
- Monte Carlo high-field transport in degenerate GaAsJournal of Physics C: Solid State Physics, 1976
- Disorder scattering in solid solutions of III–V semiconducting compoundsJournal of Physics and Chemistry of Solids, 1973