On-wafer calibration techniques for giga-hertz CMOS measurements
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents five different methods for performing on-wafer calibration of RF CMOS measurements. All methods are compatible with standard CMOS technology. A comparison of method performance up to 12 GHz is made with measurements on RF CMOS devices. The results verify that substrate and metallization losses must be considered to obtain high accuracy. Fixture design issues are discussed and a method for mitigating overestimation of DUT performance is suggested.Keywords
This publication has 4 references indexed in Scilit:
- Microwave frequency measurements and modeling of MOSFETs on low resistivity silicon substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modelingIEEE Transactions on Electron Devices, 1998
- A new technique for in-fixture calibration using standards of constant lengthIEEE Transactions on Microwave Theory and Techniques, 1998
- A three-step method for the de-embedding of high-frequency S-parameter measurementsIEEE Transactions on Electron Devices, 1991