Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling

1 May 1998

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 45 (5) , 1017-1025
https://doi.org/10.1109/16.669514

Abstract

The maturation of low-cost silicon-on-insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static (NQS) small-signal model for MOSFETs. The extracted model is shown to be valid up to 40 GHz.

Keywords

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