The influence of sodium on the plasma hydrogenation of polycrystalline silicon thin film transistors
- 1 August 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (8) , 815-817
- https://doi.org/10.1088/0268-1242/6/8/018
Abstract
It is shown that large negative threshold voltages and high leakage currents can occur in n-channel polycrystalline silicon thin film transistors during the plasma hydrogenation process. This is a result of sodium contamination, with the sodium ions residing in both the silicon dioxide and the grain boundaries of the polycrystalline silicon, close to the silicon-silicon dioxide interface. The sodium ions in the grain boundaries act like donor centres, and a strong electron channel is formed in the device. It is essential that film transistors are passivated against sodium ions before studying the effects of plasma hydrogenation on device characteristics.Keywords
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