Mobility study on RIE etched silicon surfaces using SF/sub 6//O/sub 2/ gas etchants
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (11) , 1997-2005
- https://doi.org/10.1109/16.239740
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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