First direct observation of voids in bulk, undoped, semi-insulating GaAs
- 11 November 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (20) , 2585-2587
- https://doi.org/10.1063/1.105910
Abstract
Defect selective A/B chemical etching, low-temperature scanning cathodoluminescence, and transmission electron microscopy have been used to study the microstructure of undoped, semi-insulating liquid-encapsulated Czochralski GaAs wafers. It is shown for the first time that a distribution of microvoids is present in the bulk material at a number density of at least 1010 cm−3. These microvoids, which are present in the centers of the dislocation cell structures observed in the GaAs, may result from the post-growth heat treatment of ingots which is used to improve the material homogeneity. A possible explanation for the formation of these microvoids is given.Keywords
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