X-ray reflectometry on (SimGen)p short-period superlattices
- 15 November 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (10) , 5710-5712
- https://doi.org/10.1063/1.350165
Abstract
Grazing incidence x-ray reflectometry on molecular beam epitaxy grown (SimGen)p short-period superlattices is reported. Reflectivity curves are analyzed to estimate the structural perfection of samples grown on (100)Si and Ge substrates. Samples grown on Si with n<4 were found to have sharp interfaces (half a monolayer wide) but a structure with n≊8 had rough interfaces (two monolayers wide) consistent with a transition to a three-dimensional growth mode. Superlattices grown on Ge, have sharper interfaces than equivalent (with Si and Ge layer thicknesses reversed) structures on Si.This publication has 18 references indexed in Scilit:
- Strain relaxation during the initial stages of growth in Ge/Si(001)Physical Review B, 1991
- Interdiffusion and strain relaxation in (SimGen)p superlatticesApplied Physics Letters, 1990
- Surface-stress-induced order in SiGe alloy filmsPhysical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Long-range order in thick, unstrainedepitaxial layersPhysical Review Letters, 1990
- Rheed Observation of Lattice Relaxation During Ge/Si(O01) HeteroepitaxyMRS Proceedings, 1989
- New optical transitions in strained Si-Ge superlatticesPhysical Review B, 1987
- Ordering in Si1−xGex crystalsSolid State Communications, 1987
- Observation of Order-Disorder Transitions in Strained-Semiconductor SystemsPhysical Review Letters, 1985
- Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion ScatteringPhysical Review Letters, 1981