Electroluminescence in Amphoteric Silicon-Doped GaAs Diodes. II. Transient Response
- 15 March 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (4) , 1602-1607
- https://doi.org/10.1063/1.1659079
Abstract
An electrical and optical study has been made of the transient response of amphoteric Si‐doped GaAs diodes. The luminescent turn‐on and turn‐off times were found to increase both with decreasing photon energy and with decreasing current drive. These results are consistent with a theory based on the wavy band model in which the recombination is from deep localized donor states and deep localized acceptor states.This publication has 10 references indexed in Scilit:
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