Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing

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Abstract
This work is aimed at studying the regrowth behavior of single and double buried damage layers on subsequent laser annealing of P+ implanted Si, implanted at 120 keV to doses of 5×1014/cm2 and 7.5×1015/cm2, respectively. A Q‐switched ruby laser operating at a wavelength of 1094 nm was used for the annealing. 90° cross‐sectional transmission electron microscopy (TEM) and MeV He+ channeling spectroscopy were used to examine the damage structures and their depth distributions. At 0.9 J/cm2, TEM results showed that the single buried damage layer regrew into two discrete damage layers. At 2.0 J/cm2, TEM results showed that the first layer in the double buried damage layers type structures either completely anneal out, leaving a partially annealed second layer consisting of damage clusters or had dislocations in the first damage layer region that extended from the surface and were in direct contact with the deeper lying second layer of damage clusters. The MeV He+ channeling spectra for the above samples were in agreement with the TEM results.