Interband resonant tunneling in InAs/AlSb/GaSb symmetric polytype structures

Interband tunneling in InAs/AlSb/GaSb double-barrier heterostructures was calculated. A realistic ten-band tight-binding model was used to include the effect of mixing between the bands. The model was solved utilizing a technique for many-layer structures which eliminates numerical instabilities. We present current density versus voltage curves for different well and barrier widths and show the effects of including the dependence of the transmission on the parallel component of the incident wave vector (${\mathit{k}}_{\mathrm{\parallel }}$). The inclusion of the effect of ${\mathit{k}}_{\mathrm{\parallel }}$ produces mixing of light- and heavy-hole states, which is otherwise negligible. We find that the current density peak increases significantly with increasing well width for certain ranges of well widths. Comparison with experiment and previous calculations for related systems are made.