Relative influence of grain boundaries and intragrain defects on the photocurrents obtained with bridgman polysilicon
- 30 April 1983
- journal article
- Published by Elsevier in Solar Cells
- Vol. 8 (3) , 269-281
- https://doi.org/10.1016/0379-6787(83)90066-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Photocurrent and diffusion lengths at the vicinity of grain boundaries (g.b.) in N and P-type polysilicon. Evaluation of the g.b. recombination velocity)Revue de Physique Appliquée, 1982
- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Electronic processes at grain boundaries in polycrystalline semiconductors under optical illuminationIEEE Transactions on Electron Devices, 1977