Studies of frequency dependent C-V characteristics of neutron irradiated p/sup +/-n silicon detectors
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (2) , 244-250
- https://doi.org/10.1109/23.289304
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Radiation damage in silicon strip detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1987
- Radiation damage in silicon detectorsNuclear Instruments and Methods in Physics Research, 1984
- Carrier Emission and RecombinationPublished by Springer Nature ,1983
- Studies of defects in neutron-irradiated p-type silicon by admittance measurements of n+-p diodesJournal of Applied Physics, 1978
- Admittance studies of neutron-irradiated silicon p+-n diodesJournal of Applied Physics, 1977
- Conductance and capacitance studies in GaP Schottky barriersJournal of Applied Physics, 1975
- Determination of the spatial distribution of deep centers from capacitance measurements of pn junctionsApplied Physics Letters, 1972
- Frequency Response of Gold Impurity Centers in the Depletion Layer of Reverse-Biased Silicon p+n JunctionsJournal of Applied Physics, 1972
- Calculated Small Signal Characteristics for Iradiated PN JunctionsIEEE Transactions on Nuclear Science, 1972
- ACCURATE CAPACITANCE CALCULATIONS FOR PN JUNCTIONS CONTAINING TRAPSApplied Physics Letters, 1971