Cross-sectional transmission electron microscope study of residual defects in BF+2 implanted (111) Si
- 1 December 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (11) , 4421-4425
- https://doi.org/10.1063/1.339079
Abstract
A combined cross‐sectional and plain‐view transmission electron microscope study of residual defects in 110‐keV 5×1015/cm2 BF+2 ‐implanted (111) Si has been carried out. The samples were annealed isothermally in N2 ambient at 600–1100 °C with 100 °C increments. The distribution, density, and size of point defect clusters, twins, equiaxial loops, elongated loops, and bubbles were analyzed in detail. The origin and evolution of the residual defects are discussed.This publication has 19 references indexed in Scilit:
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