Interface analysis in polysilicon thin films and poly-Si/SiO2 systems
- 1 October 1992
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 18 (10) , 709-712
- https://doi.org/10.1002/sia.740181004
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Pressure dependence of i n s i t u boron-doped silicon films prepared by low-pressure chemical vapor deposition. II. ResistivityJournal of Applied Physics, 1989
- On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic‐Doped Polycrystalline Silicon Thin FilmsJournal of the Electrochemical Society, 1989
- Front propagation in self-sustained and laser-driven explosive crystal growth: Stability analysis and morphological aspectsPhysical Review B, 1984