Pressure dependence of i n s i t u boron-doped silicon films prepared by low-pressure chemical vapor deposition. II. Resistivity
- 15 November 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (10) , 4812-4817
- https://doi.org/10.1063/1.343795
Abstract
The effects of silane pressure and temperature on the in situ boron incorporation and resistivity of low‐pressure chemical vapor deposited polycrystalline silicon films were studied in the ranges of 2.5×10−3–1 Torr and 515–700 °C. By lowering the silane pressure, the boron concentration increases (up to 1×1022 cm−3) and the resistivity decreases down to about 2×10−3 Ω cm without annealing. For high deposition pressure (≥0.1 Torr), the resistivity decreases as the temperature is lowered. In this latter case the secondary‐ion mass spectrometry profiles reveal a boron accumulation at the layer‐substrate interface, which is always observed independently of the substrate nature.This publication has 10 references indexed in Scilit:
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