Evolution of buried compound layers formed by ion implantation
- 20 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 12 (1-2) , 107-114
- https://doi.org/10.1016/0921-5107(92)90268-e
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Sputtering of (100) Si by 350 keV Co implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into SiApplied Physics Letters, 1988
- Mechanisms of buried oxide formation by ion implantationApplied Physics Letters, 1987
- Novel dielectric/silicon planar structures formed by ion beam synthesisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Ion beam synthesis of thin buried layers of SiO2 in siliconVacuum, 1986
- SiO2 buried layer formation by subcritical dose oxygen ion implantationApplied Physics Letters, 1986
- Growth of strained-layer semiconductor-metal-semiconductor heterostructuresApplied Physics Letters, 1986
- High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealingApplied Physics Letters, 1986
- Limits of composition achievable by ion implantationJournal of Vacuum Science and Technology, 1978
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969