Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)
- 26 June 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (26) , 4004-4006
- https://doi.org/10.1063/1.126848
Abstract
By choosing a material that has an appropriate asymmetric lattice mismatch to the host substrate, in this case ErSi2 on Si(001), it is possible to grow one-dimensional epitaxial crystals. ErSi2 nanowires are less than one nanometer high, a few nanometers wide, close to a micron long, crystallographically aligned to 〈110〉Si directions, straight, and atomically regular.Keywords
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