Ion beam modification of the dielectric properties of thin silicon dioxide films
- 1 January 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 48-49, 264-268
- https://doi.org/10.1016/0169-4332(91)90342-h
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Electrical properties of 1 MeV helium implanted metal- oxide-semiconductor structuresPhysica Status Solidi (a), 1986
- Charge motion in silicon MOS structuresThin Solid Films, 1980
- Drift mobilities of Na+ and K+ ions in SiO2 filmsApplied Physics Letters, 1977
- Cation transport in SiO2Physica Status Solidi (a), 1972