Charge motion in silicon MOS structures
- 1 July 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 70 (1) , 37-41
- https://doi.org/10.1016/0040-6090(80)90409-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Room temperature transformations in SiO2 layers induced by chemical compounds: IIThin Solid Films, 1979
- The Role of Hydrogen in SiO2 Films on SiliconJournal of the Electrochemical Society, 1979
- Room temperature transformations induced in SiO2 layers by chemical compounds: IThin Solid Films, 1978
- Investigation of mobile ions in MOS structures using the TSIC methodJournal of Applied Physics, 1978
- Some studies on the instability in MOS devices due to water vapour contaminationInternational Journal of Electronics, 1976
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965
- Thermoemission und Photoemission von NatriumchloridCzechoslovak Journal of Physics, 1954
- CALCULATION OF ELECTRON TRAP DEPTHS FROM THERMOLUMINESCENCE MAXIMACanadian Journal of Chemistry, 1954
- A Note on the Analysis of First-Order Glow CurvesJournal of Applied Physics, 1953