Ion implantation induced stoichiometric imbalance in SiO2
- 1 October 1987
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 30 (1-4) , 265-271
- https://doi.org/10.1016/0169-4332(87)90101-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Hole trapping in the bulk of SiO2 layers at room temperatureJournal of Applied Physics, 1980
- Defect mobility and reaction: Diffusional and rate theory formulations in one and three dimensionsRadiation Effects, 1970