Study of bipolar transistor matching at high current level with various test configurations leading to a new model approach
- 13 December 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Matching of bipolar transistors has been characterized for high currents. The predominant impact of access resistance mismatch is clearly demonstrated, and matching models are suggested. Moreover, matching results dependency on test configurations is studied.Keywords
This publication has 2 references indexed in Scilit:
- Improving BiCMOS technologies using BJT parametric mismatch characterisationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A comprehensive vertical BJT mismatch modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002