All optical, high contrast absorptive modulation in an asymmetric Fabry–Perot étalon
- 24 June 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (25) , 2877-2879
- https://doi.org/10.1063/1.104734
Abstract
We report a 27:1 switching contrast ratio with 2.5 mW of power in an asymmetric Fabry–Perot étalon. The modulation is achieved by optical saturation of the excitonic absorption profile of a 95 Å GaAs/AlGaAs multiple quantum well structure grown on a high‐reflectivity dielectric stack mirror.Keywords
This publication has 9 references indexed in Scilit:
- Very low voltage, normally-off asymmetric Fabry–Perot reflection modulatorElectronics Letters, 1990
- Extremely low-voltage Fabry-Perot reflection modulatorsIEEE Photonics Technology Letters, 1990
- Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrorsIEEE Photonics Technology Letters, 1989
- Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1Electronics Letters, 1989
- Symmetric self-electro-optic effect device: Optical set-reset latchApplied Physics Letters, 1988
- Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAsApplied Physics Letters, 1988
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Optical nonlinearity, bistability, and signal processing in semiconductorsJournal of the Optical Society of America B, 1985
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984