Epitaxial regrowth of Si implanted (100) and (211) GaAs
- 16 March 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 76 (1) , 131-136
- https://doi.org/10.1002/pssa.2210760115
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Damage annealing behavior of Se implanted GaAsJournal of Physics and Chemistry of Solids, 1983
- Dose dependence of epitaxial regrowth of Se-implanted GaAsApplied Physics Letters, 1982
- Some observations on the amorphous to crystalline transformation in siliconJournal of Applied Physics, 1982
- Ion implantation and low-temperature epitaxial regrowth of GaAsJournal of Applied Physics, 1981
- Epitaxial regrowth of Ar-implanted amorphous siliconJournal of Applied Physics, 1978
- Reordering of implanted amorphous layers in gaasRadiation Effects, 1977
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Electron microscopy and diffraction of twinned structures in evaporated films of goldPhilosophical Magazine, 1963