Creation of E' Centers in Silica by Glow-Discharge Plasma and Their Annealing
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2007
- https://doi.org/10.1143/jjap.27.l2007
Abstract
ESR measurements were performed for silica glasses exposed to rf plasma of various kinds of gases. During a short time of exposure, UV light emitted from the plasma created E' centers in the bulk of glass. After a long time of exposure, the density of E' centers decreased by the influence of plasma particles or high-energy UV light on the surface. The remnant E' centers were easily annealed out, even at room temperature.Keywords
This publication has 12 references indexed in Scilit:
- Characterization of three E'-center variants in X- and γ-irradiated high purity a-SiO2Published by Elsevier ,2002
- ESR Centers in Fused Quartz Exposed to Glow-Discharge Plasmas of Ar and H2Japanese Journal of Applied Physics, 1988
- Temperature Dependence of the E′ Center Creation in Silica GlassesPhysica Status Solidi (b), 1988
- Metastable paramagnetism in hydrogenated amorphous silicon: Evidence for a new class of defects in tetrahedrally bonded amorphous semiconductorsPhysical Review B, 1987
- Electron Spin Resonance and Photoluminescence in a-Si1-xCx:H Deposited at Low Substrate TemperatureJapanese Journal of Applied Physics, 1987
- Films and substrates interaction in a-Ge1−xCx:H, a-Si1−xNx:H and a-Si1−xCx:H elucidated by ESRJournal of Non-Crystalline Solids, 1985
- New ESR signals in P-doped a-Si:HJournal of Non-Crystalline Solids, 1985
- Defect structure of glassesJournal of Non-Crystalline Solids, 1985
- Charged defects in vitreous silicaJournal of Non-Crystalline Solids, 1980
- Intrinsic and modified defect states in silicaJournal of Non-Crystalline Solids, 1979