Electron Spin Resonance and Photoluminescence in a-Si1-xCx:H Deposited at Low Substrate Temperature
- 1 July 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (7R) , 996-998
- https://doi.org/10.1143/jjap.26.996
Abstract
Electron spin resonance and photoluminescence were measured for a-Si1-x C x :H films deposited at low substrate termperatures by a glow discharge method. In the range of the carbon content above 0.55, where the films show intense photoluminescence, the spin density in the film deposited at room temperature was less than 5×10-2 of that in the film deposited at 260°C. The lower spin density comes from the incorporation of a large number of H atoms in the film deposited at room temperature, which results in the intense photoluminescence.Keywords
This publication has 9 references indexed in Scilit:
- Visible-Light Injection-Electroluminescent a-SiC/p-i-n DiodeJapanese Journal of Applied Physics, 1985
- Preparation of hydrogenated amorphous Si-C alloy films and their propertiesThin Solid Films, 1984
- Hydrogen Content in a-SiC:H Films Prepared by Plasma Decomposition of Silane and Methane or EthyleneJapanese Journal of Applied Physics, 1984
- Polarization effects in AC electroluminescence of a-Si1−xCx:HJournal of Non-Crystalline Solids, 1983
- Electroluminescence in hydrogenated amorphous silicon-carbon alloyApplied Physics Letters, 1983
- A new comparison of photoluminescence in crystalline and amorphous arsenic triselenide (As2Se3)Philosophical Magazine Part B, 1983
- Defects in hydrogenated amorphous silicon-carbon alloy films prepared by glow discharge decomposition and sputteringJournal of Applied Physics, 1982
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981